ARRAY SUBSTRATE, DISPLAY PANEL, AND DISPLAY APPARATUS

An array substrate. The array substrate comprises a substrate and a plurality of thin-film transistors arranged on the substrate. Each thin film transistor comprises a gate pattern, a semiconductor pattern, a source pattern, and a drain pattern. The gate pattern is arranged on the substrate and comp...

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Bibliographische Detailangaben
Hauptverfasser:	ZHOU, Jiulei, ZHANG, Donghua, DUAN, Zhilong, BIAN, Ruomei, JIN, Honggui, SUN, Pingyuan, YANG, Yue, WANG, Peipei, LIU, Yang, ZHANG, Yong
Format:	Patent
Sprache:	chi ; eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	An array substrate. The array substrate comprises a substrate and a plurality of thin-film transistors arranged on the substrate. Each thin film transistor comprises a gate pattern, a semiconductor pattern, a source pattern, and a drain pattern. The gate pattern is arranged on the substrate and comprises a first side wall and a second side wall which are oppositely arranged in a first direction. The first side wall is close to the source pattern, and the second side wall is close to the drain pattern. The orthographic projection of the semiconductor pattern on the substrate is located within the range of the orthographic projection of the gate pattern on the substrate, and there is a gap between same and the boundary of the gate pattern. The source pattern and the drain pattern are spaced apart in the first direction and are respectively electrically connected to two ends of the semiconductor pattern in the first direction. In the first direction, the spacing between an end, close to the first side wall, of t