SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR, AND MEMORY SYSTEM

Provided in the present application are a semiconductor device and a preparation method therefor, and a memory system. The semiconductor device comprises a first semiconductor structure. The first semiconductor structure comprises a first selection transistor, which comprises a first channel layer;...

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Bibliographische Detailangaben
Hauptverfasser: ZHAO, Dongxue, HUO, Zongliang, YANG, Tao, XIA, Zhiliang, SUN, Changzhi, ZHOU, Wenxi
Format: Patent
Sprache:chi ; eng ; fre
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Zusammenfassung:Provided in the present application are a semiconductor device and a preparation method therefor, and a memory system. The semiconductor device comprises a first semiconductor structure. The first semiconductor structure comprises a first selection transistor, which comprises a first channel layer; a second selection transistor, which comprises a gate electrode; and a capacitor structure, which comprises a first electrode layer, wherein two ends of the first electrode layer are connected to the gate electrode of the second selection transistor and the first channel layer of the first selection transistor, respectively. The present application can prevent the problem of a state being broken by means of a reading operation. Sont proposés dans la présente demande un dispositif à semi-conducteur et un procédé de préparation associé, ainsi qu'un système de mémoire. Le dispositif à semi-conducteur comprend une première structure semi-conductrice. La première structure semi-conductrice comprend un premier transistor