METHOD FOR MANUFACTURING A PLURALITY OF POLYCRYSTALLINE SILICON CARBIDE SUBSTRATES

The invention relates to a method for manufacturing a plurality of polycrystalline silicon carbide substrates (200), the method comprising the following steps: * forming a multilayer structure by alternately depositing a plurality of polycrystalline silicon carbide layers (20, 21, 22, 23, 24) and a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BOUDET, Thierry, CHAGNEUX, Valentine, LAGRANGE, Mélanie, FIGUET, Christophe, BIARD, Hugo
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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