METHOD FOR MANUFACTURING A PLURALITY OF POLYCRYSTALLINE SILICON CARBIDE SUBSTRATES

The invention relates to a method for manufacturing a plurality of polycrystalline silicon carbide substrates (200), the method comprising the following steps: * forming a multilayer structure by alternately depositing a plurality of polycrystalline silicon carbide layers (20, 21, 22, 23, 24) and a...

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Bibliographische Detailangaben
Hauptverfasser:	BOUDET, Thierry, CHAGNEUX, Valentine, LAGRANGE, Mélanie, FIGUET, Christophe, BIARD, Hugo
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention relates to a method for manufacturing a plurality of polycrystalline silicon carbide substrates (200), the method comprising the following steps: * forming a multilayer structure by alternately depositing a plurality of polycrystalline silicon carbide layers (20, 21, 22, 23, 24) and a plurality of separation layers (30, 31, 32, 33) on at least one face of a temporary support substrate (10); * detaching each polycrystalline silicon carbide layer (20, 21, 22, 23, 24) from the multilayer structure by removing the temporary substrate (10) and each separation layer (30, 31, 32, 33) to form a respective polycrystalline silicon carbide substrate (200). L'invention concerne un procédé de fabrication d'une pluralité de substrats (200) de carbure de silicium polycristallin, ledit procédé comprenant les étapes suivantes : * la formation d'une structure multicouches par le dépôt alterné d'une pluralité de couches de carbure de silicium polycristallin (20, 21, 22, 23, 24) et d'une pluralité de couches de séparation (30, 31, 32, 33) sur au moins une face d'un substrat support temporaire (10), * le détachement de chaque couche de carbure de silicium polycristallin (20, 21, 22, 23, 24) de la structure multicouche par retrait du substrat temporaire (10) et de chaque couche de séparation (30, 31, 32, 33) pour former un substrat (200) de carbure de silicium polycristallin respectif.