COMPONENT FOR SEMICONDUCTOR ETCHING PROCESS, AND MANUFACTURING METHOD THEREFOR

The present invention relates to a component for a semiconductor etching process, and a manufacturing method therefor, and, more specifically, to a component for a semiconductor etching process, and a manufacturing method therefor, the component comprising a coating layer, which includes metal fluor...

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Bibliographische Detailangaben
Hauptverfasser:	KIM, Dae Gean, LEE, Kyung Min
Format:	Patent
Sprache:	eng ; fre ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention relates to a component for a semiconductor etching process, and a manufacturing method therefor, and, more specifically, to a component for a semiconductor etching process, and a manufacturing method therefor, the component comprising a coating layer, which includes metal fluoride on the surface of the component used in the semiconductor etching process, so as to improve plasma resistance. La présente invention concerne un composant pour un procédé de gravure de semi-conducteur, et son procédé de fabrication, et, plus spécifiquement, un composant pour un processus de gravure de semi-conducteur, et son procédé de fabrication, le composant comprenant une couche de revêtement, qui comprend du fluorure métallique sur la surface du composant utilisé dans le processus de gravure de semi-conducteur, de façon à améliorer la résistance au plasma. 본 발명은 반도체 식각 공정용 부품 및 이의 제조방법에 관한 것으로, 구체적으로 반도체 식각 공정에서 사용되는 부품의 표면에 금속불화물을 포함하는 코팅층을 포함함으로써 내플라즈마성을 향상시킬 수 있는 반도체 식각 공정용 부품 및 이의 제조방법에 관한 것이다.