SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS

This semiconductor device includes a thin film transistor comprising, on a substrate: an oxide semiconductor layer, which comprises an impurity region containing boron as an impurity and a channel region, and in which an atomic ratio of In to all metal elements is 70 atom % or more; a plurality of i...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KAWASHIMA, Emi, TSURUMA, Yuki, NAGATOMI, Hisanori, MIWA, Hiroyuki, IWASE, Nobuhiro
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!