METHODS OF GROWING METAL-CONTAINING FILMS

Methods of forming metal-containing films for electronic devices (e.g., logic devices and/or memory devices) and methods for reducing equivalent oxide thickness (EOT) penalty in electronic devices are disclosed. The methods comprise exposing a substrate surface to a metal precursor, such as titanium...

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Bibliographische Detailangaben
Hauptverfasser:	JAIN, Pratham, HONG, EunKee, CHEN, Shih Chung, SALY, Mark, ANTHIS, Jeffrey W, THOMPSON, David, YAN, Haoming, LIN, Yongjing, WU, Liqi, DAN, Arkaprava, SRIRAM, Mandyam, KALUTARAGE, Lakmal C, MANDRELL, Lisa Michelle, CHANG, Mei, DEVRAJAN, Janardhan
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Methods of forming metal-containing films for electronic devices (e.g., logic devices and/or memory devices) and methods for reducing equivalent oxide thickness (EOT) penalty in electronic devices are disclosed. The methods comprise exposing a substrate surface to a metal precursor, such as titanium chloride (TiCl4), a reducing agent, such as a cyclic 1,4-diene, and a reactant, ammonia (NH3), either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film. Procédés de formation de films contenant du métal destinés à des dispositifs électroniques (par exemple, des dispositifs logiques et/ou des dispositifs de mémoire) et procédés de réduction de la pénalité d'épaisseur d'oxyde équivalente (EOT) dans des dispositifs électroniques. Les procédés consistent à exposer une surface de substrat à un précurseur métallique, tel que le chlorure de titane (TiCl4), à un agent réducteur, tel qu'un 1,4-diène cyclique, et à un réactif, l'ammoniac (NH3), soit simultanément, soit partiellement simultanément, soit séparément et séquentiellement pour former le film contenant du métal.