VAPOR-PHASE ETCH OF METAL-CONTAINING MATERIALS

The disclosed and claimed subject matter relates to processes for performing selective thermal vapor-phase etching of metals, including Ti, Co, Ni, Cu, Mo, Ru, Ta and/or W, and compounds thereof, such as oxides, hydroxides, oxyhydroxides, carbonates, carbides, fluorides, or chlorides, which do not r...

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Bibliographische Detailangaben
Hauptverfasser:	VU, Nguyen, ZOPE, Bhushan, MCBRIARTY, Martin
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The disclosed and claimed subject matter relates to processes for performing selective thermal vapor-phase etching of metals, including Ti, Co, Ni, Cu, Mo, Ru, Ta and/or W, and compounds thereof, such as oxides, hydroxides, oxyhydroxides, carbonates, carbides, fluorides, or chlorides, which do not require the use of plasmas or halogenated volatilizing agents. La présente invention divulgue et revendique des procédés de mise en œuvre d'une attaque chimique en phase vapeur thermique sélective de métaux, notamment de Ti, Co, Ni, Cu, Mo, Ru, Ta et/ou de W, et leurs composés, tels que des oxydes, des hydroxydes, des oxyhydroxydes, des carbonates, des carbures, des fluorures ou des chlorures, qui ne nécessitent pas l'utilisation de plasmas ou d'agents de volatilisation halogénés.