COMPOSITE COMPRISING GALLIUM NITRIDE AND DIAMOND AND PRODUCTION METHOD FOR SAME
The present invention provides a production method for a composite that makes it possible to join GaN and diamond even in an air atmosphere while also suppressing deterioration of crystallinity of the diamond and GaN. Provided is a production method for a composite in which GaN and diamond are joine...
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| creator | MATSUMAE Takashi KURASHIMA Yuuichi TAKAGI Hideki |
| description | The present invention provides a production method for a composite that makes it possible to join GaN and diamond even in an air atmosphere while also suppressing deterioration of crystallinity of the diamond and GaN. Provided is a production method for a composite in which GaN and diamond are joined, said method comprising: a first substrate treatment step for performing one or more treatments from among an oxidation treatment, a nitriding treatment, and a reduction treatment on a surface of a gallium oxide layer of a first substrate to functionalize the surface of the gallium oxide layer, said first substrate comprising a gallium nitride layer and said gallium oxide layer, which is formed on the gallium nitride layer and is exposed; a second substrate treatment step for performing an oxidation treatment on a surface of a diamond layer of a second substrate that comprises said diamond layer, the surface of which is a (111) plane, to functionalize the surface of the diamond layer; and a joining step for imparting reaction energy to a contact part between the surface of the gallium oxide layer that has undergone the first substrate treatment step and the surface of the diamond layer which has undergone the second substrate treatment step while these surfaces are in a state of contact, thereby joining the first substrate and the second substrate.
La présente invention concerne un procédé de production d'un composite qui permet de joindre du GaN et du diamant même dans une atmosphère d'air tout en supprimant également la détérioration de la cristallinité du diamant et du GaN. Est prévu un procédé de production d'un composite dans lequel du GaN et du diamant sont joints, ledit procédé comprenant : une première étape de traitement de substrat pour effectuer un ou plusieurs traitements parmi un traitement d'oxydation, un traitement de nitruration et un traitement de réduction sur une surface d'une couche d'oxyde de gallium d'un premier substrat pour fonctionnaliser la surface de la couche d'oxyde de gallium, ledit premier substrat comprenant une couche de nitrure de gallium et ladite couche d'oxyde de gallium, qui est formée sur la couche de nitrure de gallium et est exposée ; une seconde étape de traitement de substrat pour effectuer un traitement d'oxydation sur une surface d'une couche de diamant d'un second substrat qui comprend ladite couche de diamant, dont la surface est un plan (111), pour fonctionnaliser la surface de la couche de diamant ; et une étape |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2024203459A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2024203459A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2024203459A13</originalsourceid><addsrcrecordid>eNrjZPB39vcN8A_2DHFVALGCPIM9_dwV3B19fDxDfRX8PEOCPF1cFRz9XBRcPB19_YE0iB0Q5O8S6hzi6e-n4Osa4uHvouDmH6QQ7OjrysPAmpaYU5zKC6W5GZTdXEOcPXRTC_LjU4sLEpNT81JL4sP9jQyMTIwMjE1MLR0NjYlTBQAEFC-j</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>COMPOSITE COMPRISING GALLIUM NITRIDE AND DIAMOND AND PRODUCTION METHOD FOR SAME</title><source>esp@cenet</source><creator>MATSUMAE Takashi ; KURASHIMA Yuuichi ; TAKAGI Hideki</creator><creatorcontrib>MATSUMAE Takashi ; KURASHIMA Yuuichi ; TAKAGI Hideki</creatorcontrib><description>The present invention provides a production method for a composite that makes it possible to join GaN and diamond even in an air atmosphere while also suppressing deterioration of crystallinity of the diamond and GaN. Provided is a production method for a composite in which GaN and diamond are joined, said method comprising: a first substrate treatment step for performing one or more treatments from among an oxidation treatment, a nitriding treatment, and a reduction treatment on a surface of a gallium oxide layer of a first substrate to functionalize the surface of the gallium oxide layer, said first substrate comprising a gallium nitride layer and said gallium oxide layer, which is formed on the gallium nitride layer and is exposed; a second substrate treatment step for performing an oxidation treatment on a surface of a diamond layer of a second substrate that comprises said diamond layer, the surface of which is a (111) plane, to functionalize the surface of the diamond layer; and a joining step for imparting reaction energy to a contact part between the surface of the gallium oxide layer that has undergone the first substrate treatment step and the surface of the diamond layer which has undergone the second substrate treatment step while these surfaces are in a state of contact, thereby joining the first substrate and the second substrate.
La présente invention concerne un procédé de production d'un composite qui permet de joindre du GaN et du diamant même dans une atmosphère d'air tout en supprimant également la détérioration de la cristallinité du diamant et du GaN. Est prévu un procédé de production d'un composite dans lequel du GaN et du diamant sont joints, ledit procédé comprenant : une première étape de traitement de substrat pour effectuer un ou plusieurs traitements parmi un traitement d'oxydation, un traitement de nitruration et un traitement de réduction sur une surface d'une couche d'oxyde de gallium d'un premier substrat pour fonctionnaliser la surface de la couche d'oxyde de gallium, ledit premier substrat comprenant une couche de nitrure de gallium et ladite couche d'oxyde de gallium, qui est formée sur la couche de nitrure de gallium et est exposée ; une seconde étape de traitement de substrat pour effectuer un traitement d'oxydation sur une surface d'une couche de diamant d'un second substrat qui comprend ladite couche de diamant, dont la surface est un plan (111), pour fonctionnaliser la surface de la couche de diamant ; et une étape de jonction pour conférer une énergie de réaction à une partie de contact entre la surface de la couche d'oxyde de gallium qui a subi la première étape de traitement de substrat et la surface de la couche de diamant qui a subi la seconde étape de traitement de substrat tandis que ces surfaces sont dans un état de contact, joignant ainsi le premier substrat et le second substrat.
ＧａＮとダイヤモンドの結晶性の劣化を抑えつつ、大気中でもこれらを接合できる複合体の製造方法を提供する。ＧａＮとダイヤモンドが接合された複合体の製造方法は、窒化ガリウム層と、窒化ガリウム層上に形成され、露出した酸化ガリウム層を備える第一基材の酸化ガリウム層の表面に、酸化処理、窒化処理、および還元処理の一つ以上の処理を施して、酸化ガリウム層の表面を官能基化する第一基材処理工程と、表面が（１１１）面であるダイヤモンド層を備える第二基材のダイヤモンド層の表面に酸化処理を施して、ダイヤモンド層の表面を官能基化する第二基材処理工程と、第一基材処理工程を経た酸化ガリウム層の表面と、第二基材処理工程を経たダイヤモンド層の表面を接触させた状態で、この接触部に反応エネルギーを与えて、第一基材と第二基材を接合する接合工程を有する。</description><language>eng ; fre ; jpn</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CLADDING OR PLATING BY SOLDERING OR WELDING ; CRYSTAL GROWTH ; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; LAYERED PRODUCTS ; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM ; MACHINE TOOLS ; METAL-WORKING NOT OTHERWISE PROVIDED FOR ; METALLURGY ; PERFORMING OPERATIONS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SOLDERING OR UNSOLDERING ; TRANSPORTING ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL ; WELDING ; WORKING BY LASER BEAM</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241003&DB=EPODOC&CC=WO&NR=2024203459A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241003&DB=EPODOC&CC=WO&NR=2024203459A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MATSUMAE Takashi</creatorcontrib><creatorcontrib>KURASHIMA Yuuichi</creatorcontrib><creatorcontrib>TAKAGI Hideki</creatorcontrib><title>COMPOSITE COMPRISING GALLIUM NITRIDE AND DIAMOND AND PRODUCTION METHOD FOR SAME</title><description>The present invention provides a production method for a composite that makes it possible to join GaN and diamond even in an air atmosphere while also suppressing deterioration of crystallinity of the diamond and GaN. Provided is a production method for a composite in which GaN and diamond are joined, said method comprising: a first substrate treatment step for performing one or more treatments from among an oxidation treatment, a nitriding treatment, and a reduction treatment on a surface of a gallium oxide layer of a first substrate to functionalize the surface of the gallium oxide layer, said first substrate comprising a gallium nitride layer and said gallium oxide layer, which is formed on the gallium nitride layer and is exposed; a second substrate treatment step for performing an oxidation treatment on a surface of a diamond layer of a second substrate that comprises said diamond layer, the surface of which is a (111) plane, to functionalize the surface of the diamond layer; and a joining step for imparting reaction energy to a contact part between the surface of the gallium oxide layer that has undergone the first substrate treatment step and the surface of the diamond layer which has undergone the second substrate treatment step while these surfaces are in a state of contact, thereby joining the first substrate and the second substrate.
La présente invention concerne un procédé de production d'un composite qui permet de joindre du GaN et du diamant même dans une atmosphère d'air tout en supprimant également la détérioration de la cristallinité du diamant et du GaN. Est prévu un procédé de production d'un composite dans lequel du GaN et du diamant sont joints, ledit procédé comprenant : une première étape de traitement de substrat pour effectuer un ou plusieurs traitements parmi un traitement d'oxydation, un traitement de nitruration et un traitement de réduction sur une surface d'une couche d'oxyde de gallium d'un premier substrat pour fonctionnaliser la surface de la couche d'oxyde de gallium, ledit premier substrat comprenant une couche de nitrure de gallium et ladite couche d'oxyde de gallium, qui est formée sur la couche de nitrure de gallium et est exposée ; une seconde étape de traitement de substrat pour effectuer un traitement d'oxydation sur une surface d'une couche de diamant d'un second substrat qui comprend ladite couche de diamant, dont la surface est un plan (111), pour fonctionnaliser la surface de la couche de diamant ; et une étape de jonction pour conférer une énergie de réaction à une partie de contact entre la surface de la couche d'oxyde de gallium qui a subi la première étape de traitement de substrat et la surface de la couche de diamant qui a subi la seconde étape de traitement de substrat tandis que ces surfaces sont dans un état de contact, joignant ainsi le premier substrat et le second substrat.
ＧａＮとダイヤモンドの結晶性の劣化を抑えつつ、大気中でもこれらを接合できる複合体の製造方法を提供する。ＧａＮとダイヤモンドが接合された複合体の製造方法は、窒化ガリウム層と、窒化ガリウム層上に形成され、露出した酸化ガリウム層を備える第一基材の酸化ガリウム層の表面に、酸化処理、窒化処理、および還元処理の一つ以上の処理を施して、酸化ガリウム層の表面を官能基化する第一基材処理工程と、表面が（１１１）面であるダイヤモンド層を備える第二基材のダイヤモンド層の表面に酸化処理を施して、ダイヤモンド層の表面を官能基化する第二基材処理工程と、第一基材処理工程を経た酸化ガリウム層の表面と、第二基材処理工程を経たダイヤモンド層の表面を接触させた状態で、この接触部に反応エネルギーを与えて、第一基材と第二基材を接合する接合工程を有する。</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CLADDING OR PLATING BY SOLDERING OR WELDING</subject><subject>CRYSTAL GROWTH</subject><subject>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>LAYERED PRODUCTS</subject><subject>LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM</subject><subject>MACHINE TOOLS</subject><subject>METAL-WORKING NOT OTHERWISE PROVIDED FOR</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SOLDERING OR UNSOLDERING</subject><subject>TRANSPORTING</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><subject>WELDING</subject><subject>WORKING BY LASER BEAM</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPB39vcN8A_2DHFVALGCPIM9_dwV3B19fDxDfRX8PEOCPF1cFRz9XBRcPB19_YE0iB0Q5O8S6hzi6e-n4Osa4uHvouDmH6QQ7OjrysPAmpaYU5zKC6W5GZTdXEOcPXRTC_LjU4sLEpNT81JL4sP9jQyMTIwMjE1MLR0NjYlTBQAEFC-j</recordid><startdate>20241003</startdate><enddate>20241003</enddate><creator>MATSUMAE Takashi</creator><creator>KURASHIMA Yuuichi</creator><creator>TAKAGI Hideki</creator><scope>EVB</scope></search><sort><creationdate>20241003</creationdate><title>COMPOSITE COMPRISING GALLIUM NITRIDE AND DIAMOND AND PRODUCTION METHOD FOR SAME</title><author>MATSUMAE Takashi ; KURASHIMA Yuuichi ; TAKAGI Hideki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2024203459A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; jpn</language><creationdate>2024</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CLADDING OR PLATING BY SOLDERING OR WELDING</topic><topic>CRYSTAL GROWTH</topic><topic>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>LAYERED PRODUCTS</topic><topic>LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM</topic><topic>MACHINE TOOLS</topic><topic>METAL-WORKING NOT OTHERWISE PROVIDED FOR</topic><topic>METALLURGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SOLDERING OR UNSOLDERING</topic><topic>TRANSPORTING</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><topic>WELDING</topic><topic>WORKING BY LASER BEAM</topic><toplevel>online_resources</toplevel><creatorcontrib>MATSUMAE Takashi</creatorcontrib><creatorcontrib>KURASHIMA Yuuichi</creatorcontrib><creatorcontrib>TAKAGI Hideki</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MATSUMAE Takashi</au><au>KURASHIMA Yuuichi</au><au>TAKAGI Hideki</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>COMPOSITE COMPRISING GALLIUM NITRIDE AND DIAMOND AND PRODUCTION METHOD FOR SAME</title><date>2024-10-03</date><risdate>2024</risdate><abstract>The present invention provides a production method for a composite that makes it possible to join GaN and diamond even in an air atmosphere while also suppressing deterioration of crystallinity of the diamond and GaN. Provided is a production method for a composite in which GaN and diamond are joined, said method comprising: a first substrate treatment step for performing one or more treatments from among an oxidation treatment, a nitriding treatment, and a reduction treatment on a surface of a gallium oxide layer of a first substrate to functionalize the surface of the gallium oxide layer, said first substrate comprising a gallium nitride layer and said gallium oxide layer, which is formed on the gallium nitride layer and is exposed; a second substrate treatment step for performing an oxidation treatment on a surface of a diamond layer of a second substrate that comprises said diamond layer, the surface of which is a (111) plane, to functionalize the surface of the diamond layer; and a joining step for imparting reaction energy to a contact part between the surface of the gallium oxide layer that has undergone the first substrate treatment step and the surface of the diamond layer which has undergone the second substrate treatment step while these surfaces are in a state of contact, thereby joining the first substrate and the second substrate.
La présente invention concerne un procédé de production d'un composite qui permet de joindre du GaN et du diamant même dans une atmosphère d'air tout en supprimant également la détérioration de la cristallinité du diamant et du GaN. Est prévu un procédé de production d'un composite dans lequel du GaN et du diamant sont joints, ledit procédé comprenant : une première étape de traitement de substrat pour effectuer un ou plusieurs traitements parmi un traitement d'oxydation, un traitement de nitruration et un traitement de réduction sur une surface d'une couche d'oxyde de gallium d'un premier substrat pour fonctionnaliser la surface de la couche d'oxyde de gallium, ledit premier substrat comprenant une couche de nitrure de gallium et ladite couche d'oxyde de gallium, qui est formée sur la couche de nitrure de gallium et est exposée ; une seconde étape de traitement de substrat pour effectuer un traitement d'oxydation sur une surface d'une couche de diamant d'un second substrat qui comprend ladite couche de diamant, dont la surface est un plan (111), pour fonctionnaliser la surface de la couche de diamant ; et une étape de jonction pour conférer une énergie de réaction à une partie de contact entre la surface de la couche d'oxyde de gallium qui a subi la première étape de traitement de substrat et la surface de la couche de diamant qui a subi la seconde étape de traitement de substrat tandis que ces surfaces sont dans un état de contact, joignant ainsi le premier substrat et le second substrat.
ＧａＮとダイヤモンドの結晶性の劣化を抑えつつ、大気中でもこれらを接合できる複合体の製造方法を提供する。ＧａＮとダイヤモンドが接合された複合体の製造方法は、窒化ガリウム層と、窒化ガリウム層上に形成され、露出した酸化ガリウム層を備える第一基材の酸化ガリウム層の表面に、酸化処理、窒化処理、および還元処理の一つ以上の処理を施して、酸化ガリウム層の表面を官能基化する第一基材処理工程と、表面が（１１１）面であるダイヤモンド層を備える第二基材のダイヤモンド層の表面に酸化処理を施して、ダイヤモンド層の表面を官能基化する第二基材処理工程と、第一基材処理工程を経た酸化ガリウム層の表面と、第二基材処理工程を経たダイヤモンド層の表面を接触させた状態で、この接触部に反応エネルギーを与えて、第一基材と第二基材を接合する接合工程を有する。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING CRYSTAL GROWTH CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SOLDERING OR UNSOLDERING TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WELDING WORKING BY LASER BEAM |
| title | COMPOSITE COMPRISING GALLIUM NITRIDE AND DIAMOND AND PRODUCTION METHOD FOR SAME |
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