COMPOSITE COMPRISING GALLIUM NITRIDE AND DIAMOND AND PRODUCTION METHOD FOR SAME

The present invention provides a production method for a composite that makes it possible to join GaN and diamond even in an air atmosphere while also suppressing deterioration of crystallinity of the diamond and GaN. Provided is a production method for a composite in which GaN and diamond are joine...

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Bibliographische Detailangaben
Hauptverfasser:	MATSUMAE Takashi, KURASHIMA Yuuichi, TAKAGI Hideki
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING CRYSTAL GROWTH CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SOLDERING OR UNSOLDERING TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	The present invention provides a production method for a composite that makes it possible to join GaN and diamond even in an air atmosphere while also suppressing deterioration of crystallinity of the diamond and GaN. Provided is a production method for a composite in which GaN and diamond are joined, said method comprising: a first substrate treatment step for performing one or more treatments from among an oxidation treatment, a nitriding treatment, and a reduction treatment on a surface of a gallium oxide layer of a first substrate to functionalize the surface of the gallium oxide layer, said first substrate comprising a gallium nitride layer and said gallium oxide layer, which is formed on the gallium nitride layer and is exposed; a second substrate treatment step for performing an oxidation treatment on a surface of a diamond layer of a second substrate that comprises said diamond layer, the surface of which is a (111) plane, to functionalize the surface of the diamond layer; and a joining step for imparting reaction energy to a contact part between the surface of the gallium oxide layer that has undergone the first substrate treatment step and the surface of the diamond layer which has undergone the second substrate treatment step while these surfaces are in a state of contact, thereby joining the first substrate and the second substrate. La présente invention concerne un procédé de production d'un composite qui permet de joindre du GaN et du diamant même dans une atmosphère d'air tout en supprimant également la détérioration de la cristallinité du diamant et du GaN. Est prévu un procédé de production d'un composite dans lequel du GaN et du diamant sont joints, ledit procédé comprenant : une première étape de traitement de substrat pour effectuer un ou plusieurs traitements parmi un traitement d'oxydation, un traitement de nitruration et un traitement de réduction sur une surface d'une couche d'oxyde de gallium d'un premier substrat pour fonctionnaliser la surface de la couche d'oxyde de gallium, ledit premier substrat comprenant une couche de nitrure de gallium et ladite couche d'oxyde de gallium, qui est formée sur la couche de nitrure de gallium et est exposée ; une seconde étape de traitement de substrat pour effectuer un traitement d'oxydation sur une surface d'une couche de diamant d'un second substrat qui comprend ladite couche de diamant, dont la surface est un plan (111), pour fonctionnaliser la surface de la couche de diamant ; et une étape