METHOD FOR FORMING GALLIUM NITRIDE FILM

A method for forming a gallium nitride (GaN) film, according to an embodiment of the present specification, is for forming a gallium nitride (GaN) film on a substrate and comprises the steps of: forming a gallium nitride (GaN) film on a substrate; exposing the gallium nitride (GaN) film to a plasma...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	AHN, Min Woo, WON, Gyeong Hun, KIM, Ki Duck, YOON, Seo Jun, SEOK, Ju Hee
Format:	Patent
Sprache:	eng ; fre ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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