METHOD FOR FORMING GALLIUM NITRIDE FILM
A method for forming a gallium nitride (GaN) film, according to an embodiment of the present specification, is for forming a gallium nitride (GaN) film on a substrate and comprises the steps of: forming a gallium nitride (GaN) film on a substrate; exposing the gallium nitride (GaN) film to a plasma...
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| Format: | Patent |
| Sprache: | eng ; fre ; kor |
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| Zusammenfassung: | A method for forming a gallium nitride (GaN) film, according to an embodiment of the present specification, is for forming a gallium nitride (GaN) film on a substrate and comprises the steps of: forming a gallium nitride (GaN) film on a substrate; exposing the gallium nitride (GaN) film to a plasma containing oxygen (O2); and exposing the gallium nitride (GaN) film to a plasma containing hydrogen (H2).
Un procédé de formation d'un film de nitrure de gallium (GaN), selon un mode de réalisation de la présente invention, est destiné à former un film de nitrure de gallium (GaN) sur un substrat et comprend les étapes consistant à : former un film de nitrure de gallium (GaN) sur un substrat ; exposer le film de nitrure de gallium (GaN) à un plasma contenant de l'oxygène (O2) ; et exposer le film de nitrure de gallium (GaN) à un plasma contenant de l'hydrogène (H2).
본 명세서의 실시예에 따른 질화갈륨(GaN)막 형성 방법은 기판 상에 질화갈륨(GaN)막을 형성하는 방법으로서, 기판 상에 질화갈륨(GaN)막을 형성하는 단계, 질화갈륨(GaN)막을 산소(O2)를 포함하는 플라즈마에 노출하는 단계, 및 질화갈륨(GaN)막을 수소(H2)를 포함하는 플라즈마에 노출하는 단계를 포함할 수 있다. |
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