OPTOELECTRONIC SEMICONDCUTOR DEVICE AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR DEVICE

An optoelectronic semiconductor device (1) comprising a semiconductor layer stack (10) is described herein. The layer stack (10) has a first thickness (Y1) of at least 2 μm. The layer stack (10) comprises a first region (101) of a first conductivity, a second region (102) of a second conductivity an...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BAUMANN, Simon, GOCALINSKA, Agnieszka, LAUER, Christian
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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