FILM FORMATION METHOD AND FILM FORMATION DEVICE

This film formation method comprises: providing a substrate in a processing container; supplying a raw material gas containing titanium and a reaction gas containing nitrogen into the processing container to form a titanium nitride film on the substrate by an ALD method; and causing nickel to be inc...

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Bibliographische Detailangaben
Hauptverfasser:	HIGUCHI Kensuke, SANO Masaki, IDENO Yoshikazu, KAKIMOTO Akinobu, TAKAHASHI Tsuyoshi
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	This film formation method comprises: providing a substrate in a processing container; supplying a raw material gas containing titanium and a reaction gas containing nitrogen into the processing container to form a titanium nitride film on the substrate by an ALD method; and causing nickel to be included in the titanium nitride film at the time of forming the titanium nitride film. Le procédé de formation de film selon la présente invention consiste à : fournir un substrat dans un récipient de traitement ; fournir un gaz de matière première contenant du titane et un gaz de réaction contenant de l'azote dans le récipient de traitement pour former un film de nitrure de titane sur le substrat par un procédé ALD ; et inclure le nickel dans le film de nitrure de titane au moment de la formation du film de nitrure de titane. 成膜方法は、処理容器内に基板を設けることと、処理容器内に、チタンを含む原料ガスと窒素を含む反応ガスを供給してＡＬＤ法により基板上に窒化チタン膜を成膜することと、窒化チタン膜を成膜する際に、窒化チタン膜にニッケルを含有させることと、を含む。