COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND POLISHING METHOD

Provided is a composition for chemical mechanical polishing which, when used for chemical mechanical polishing (CMP) of a semiconductor wafer including a molybdenum film and a silicon oxide film, can selectively polish the molybdenum film by attaining an increased molybdenum-film polishing rate and...

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Bibliographische Detailangaben
Hauptverfasser:	ISHIMAKI, Koki, YAMAGUCHI, Misato, HAGI, Shinichiro
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING
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