FORMING HALOGEN-DOPED DIELECTRIC FILMS
One example provides a method of forming a halogen-doped dielectric film. The method comprises forming a dielectric film comprising a plurality of dielectric film layers. The method further comprises performing a plasma doping process after forming the dielectric film. The plasma doping process comp...
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creator | AGNEW, Douglas Walter GRUMBLES, Mary Waddington ZHANG, Tao MESSINA, Daniel Christopher PETRAGLIA, Jennifer Leigh AGARWAL, Pulkit KUMAR, Ravi HOLDEN, Konner Eric Kurt |
description | One example provides a method of forming a halogen-doped dielectric film. The method comprises forming a dielectric film comprising a plurality of dielectric film layers. The method further comprises performing a plasma doping process after forming the dielectric film. The plasma doping process comprises introducing a halogen-containing precursor into a plasma, and exposing the dielectric film to reactive halogen-containing species generated in the plasma from the halogen-containing precursor, thereby forming the halogen-doped dielectric film.
Un exemple concerne un procédé de formation d'un film diélectrique dopé par halogène. Le procédé comprend la formation d'un film diélectrique comprenant une pluralité de couches de film diélectrique. Le procédé comprend en outre la réalisation d'un processus de dopage au plasma après la formation du film diélectrique. Le procédé de dopage au plasma comprend l'introduction d'un précurseur contenant un halogène dans un plasma, et l'exposition du film diélectrique à des espèces contenant un halogène réactif générées dans le plasma à partir du précurseur contenant un halogène, formant ainsi le film diélectrique dopé par halogène. |
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Un exemple concerne un procédé de formation d'un film diélectrique dopé par halogène. Le procédé comprend la formation d'un film diélectrique comprenant une pluralité de couches de film diélectrique. Le procédé comprend en outre la réalisation d'un processus de dopage au plasma après la formation du film diélectrique. Le procédé de dopage au plasma comprend l'introduction d'un précurseur contenant un halogène dans un plasma, et l'exposition du film diélectrique à des espèces contenant un halogène réactif générées dans le plasma à partir du précurseur contenant un halogène, formant ainsi le film diélectrique dopé par halogène.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240627&DB=EPODOC&CC=WO&NR=2024137399A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240627&DB=EPODOC&CC=WO&NR=2024137399A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AGNEW, Douglas Walter</creatorcontrib><creatorcontrib>GRUMBLES, Mary Waddington</creatorcontrib><creatorcontrib>ZHANG, Tao</creatorcontrib><creatorcontrib>MESSINA, Daniel Christopher</creatorcontrib><creatorcontrib>PETRAGLIA, Jennifer Leigh</creatorcontrib><creatorcontrib>AGARWAL, Pulkit</creatorcontrib><creatorcontrib>KUMAR, Ravi</creatorcontrib><creatorcontrib>HOLDEN, Konner Eric Kurt</creatorcontrib><title>FORMING HALOGEN-DOPED DIELECTRIC FILMS</title><description>One example provides a method of forming a halogen-doped dielectric film. The method comprises forming a dielectric film comprising a plurality of dielectric film layers. The method further comprises performing a plasma doping process after forming the dielectric film. The plasma doping process comprises introducing a halogen-containing precursor into a plasma, and exposing the dielectric film to reactive halogen-containing species generated in the plasma from the halogen-containing precursor, thereby forming the halogen-doped dielectric film.
Un exemple concerne un procédé de formation d'un film diélectrique dopé par halogène. Le procédé comprend la formation d'un film diélectrique comprenant une pluralité de couches de film diélectrique. Le procédé comprend en outre la réalisation d'un processus de dopage au plasma après la formation du film diélectrique. Le procédé de dopage au plasma comprend l'introduction d'un précurseur contenant un halogène dans un plasma, et l'exposition du film diélectrique à des espèces contenant un halogène réactif générées dans le plasma à partir du précurseur contenant un halogène, formant ainsi le film diélectrique dopé par halogène.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFBz8w_y9fRzV_Bw9PF3d_XTdfEPcHVRcPF09XF1DgnydFZw8_TxDeZhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHh_kYGRiaGxubGlpaOhsbEqQIARS0kaQ</recordid><startdate>20240627</startdate><enddate>20240627</enddate><creator>AGNEW, Douglas Walter</creator><creator>GRUMBLES, Mary Waddington</creator><creator>ZHANG, Tao</creator><creator>MESSINA, Daniel Christopher</creator><creator>PETRAGLIA, Jennifer Leigh</creator><creator>AGARWAL, Pulkit</creator><creator>KUMAR, Ravi</creator><creator>HOLDEN, Konner Eric Kurt</creator><scope>EVB</scope></search><sort><creationdate>20240627</creationdate><title>FORMING HALOGEN-DOPED DIELECTRIC FILMS</title><author>AGNEW, Douglas Walter ; GRUMBLES, Mary Waddington ; ZHANG, Tao ; MESSINA, Daniel Christopher ; PETRAGLIA, Jennifer Leigh ; AGARWAL, Pulkit ; KUMAR, Ravi ; HOLDEN, Konner Eric Kurt</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2024137399A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>AGNEW, Douglas Walter</creatorcontrib><creatorcontrib>GRUMBLES, Mary Waddington</creatorcontrib><creatorcontrib>ZHANG, Tao</creatorcontrib><creatorcontrib>MESSINA, Daniel Christopher</creatorcontrib><creatorcontrib>PETRAGLIA, Jennifer Leigh</creatorcontrib><creatorcontrib>AGARWAL, Pulkit</creatorcontrib><creatorcontrib>KUMAR, Ravi</creatorcontrib><creatorcontrib>HOLDEN, Konner Eric Kurt</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>AGNEW, Douglas Walter</au><au>GRUMBLES, Mary Waddington</au><au>ZHANG, Tao</au><au>MESSINA, Daniel Christopher</au><au>PETRAGLIA, Jennifer Leigh</au><au>AGARWAL, Pulkit</au><au>KUMAR, Ravi</au><au>HOLDEN, Konner Eric Kurt</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FORMING HALOGEN-DOPED DIELECTRIC FILMS</title><date>2024-06-27</date><risdate>2024</risdate><abstract>One example provides a method of forming a halogen-doped dielectric film. The method comprises forming a dielectric film comprising a plurality of dielectric film layers. The method further comprises performing a plasma doping process after forming the dielectric film. The plasma doping process comprises introducing a halogen-containing precursor into a plasma, and exposing the dielectric film to reactive halogen-containing species generated in the plasma from the halogen-containing precursor, thereby forming the halogen-doped dielectric film.
Un exemple concerne un procédé de formation d'un film diélectrique dopé par halogène. Le procédé comprend la formation d'un film diélectrique comprenant une pluralité de couches de film diélectrique. Le procédé comprend en outre la réalisation d'un processus de dopage au plasma après la formation du film diélectrique. Le procédé de dopage au plasma comprend l'introduction d'un précurseur contenant un halogène dans un plasma, et l'exposition du film diélectrique à des espèces contenant un halogène réactif générées dans le plasma à partir du précurseur contenant un halogène, formant ainsi le film diélectrique dopé par halogène.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | FORMING HALOGEN-DOPED DIELECTRIC FILMS |
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