CHEMICAL MECHANICAL POLISHING COMPOSITION HAVING IMPROVED PARTICLES

A chemical mechanical polishing composition and a method using an identical composition for chemical mechanical polishing of a substrate comprising a silicon oxide material. The present invention relates to a chemical mechanical polishing composition comprising cerium dioxide abrasive particles, wherein the abrasive particles are characterized by a cubic morphology, a zeta potential of at least 10 mV at the pH of 1-6 in the composition, and a steepness factor of at least 34. The CMP composition exhibits a high material removal rate on one hand during a CMP process and, on the other hand, causes fewer defects, such as scratches, in a substrate. L'invention concerne une composition de polissage mécano-chimique et un procédé utilisant une composition identique pour le polissage mécano-chimique d'un substrat comprenant un matériau d'oxyde de silicium. La présente invention concerne une composition de polissage mécano-chimique comprenant des particules abrasives de dioxyde de cérium, les particules abrasives étant