SILICON SUBSTRATE ON INSULATOR AND PREPARATION METHOD THEREFOR

Disclosed are a silicon substrate on an insulator and a preparation method therefor. The method comprises: providing a first semiconductor wafer, wherein the first semiconductor wafer comprises a first oxidation layer and a first substrate silicon layer, and the first oxidation layer is formed by means of separation by implanted oxygen, and providing a second semiconductor wafer; bonding the first semiconductor wafer and the second semiconductor wafer to form a third semiconductor wafer, and subjecting same to first annealing; subjecting the first substrate silicon layer to mechanical grinding and thinning; subjecting the first substrate silicon layer to chemical mechanical polishing to the surface of the first oxidation layer; carrying out second annealing; and corroding and removing the first oxidation layer by using a chemical corrosive agent, so as to obtain a silicon substrate on an insulator. In the present application, chemical mechanical polishing is used to replace alkali corrosion, thereby avoiding