FINISH POLISHING COMPOSITION

The present invention provides a finish polishing composition, the composition comprising: cerium oxide abrasive particles, an anionic polymer, a cationic polymer, a nitrogen-containing heterocyclic carboxylic acid, and a nonionic surfactant. The polishing composition provided by the present invention uses polishing solution components which are almost free of abrasive particles and are used for silicon oxide finish polishing, and the finish polishing composition can remove silicon oxide dielectric layers (for example, the solid content being lower than 50 ppm and the polishing rate being greater than 300 Å/min (I)), and finish polishing stops on tungsten, silicon nitride or polysilicon (the polishing rate being less than 50 Å/min (II), or less than 20 Å/min (III), or less than 10 Å/min (IV)). La présente invention concerne une composition de polissage de finition, la composition comprenant : des particules abrasives d'oxyde de cérium, un polymère anionique, un polymère cationique, un acide carboxylique hétér