COFEB TARGET MATERIAL AND PREPARATION METHOD THEREFOR

A CoFeB target material and a preparation method therefor. The preparation method comprises the following steps: (1) carrying out melting of a raw material blank; (2) carrying out secondary charging; (3) carrying out stirring; (4) carrying out melt casting; and (5) preparation of a target material....

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	HE, Jinjiang, YANG, Wenkui, SU, Xiaoao, LI, Yongjun, LUO, Junfeng, LV, Baoguo, ZHU, Ziyi, XU, Guojin
Format:	Patent
Sprache:	chi ; eng ; fre
Schlagworte:	ALLOYS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A CoFeB target material and a preparation method therefor. The preparation method comprises the following steps: (1) carrying out melting of a raw material blank; (2) carrying out secondary charging; (3) carrying out stirring; (4) carrying out melt casting; and (5) preparation of a target material. In the preparation method, a CoFeB cast ingot having a uniform structure and good performance is directly obtained by performing melting of a raw material blank, secondary charging, stirring and then melt casting in sequence; and a CoFeB target material is subsequently prepared by means of steps of carrying out slicing, machining, welding, etc. The obtained CoFeB target material has the advantages of a high density, a uniform structure, a low oxygen content (smaller than or equal to 100 wt ppm), etc., can satisfy magnetron sputtering requirements, and can be widely applied to the field of preparation of magnetic heads, magnetoresistive sensors, magnetoresistive elements (MRAM), etc. The preparation method can also