MEMORY REPAIRING METHOD AND CIRCUIT

Provided in the present disclosure is a memory repairing method. The method comprises: performing write-destroy on a trailing-state bit in memory bits; during a read-write process, determining whether there is a write-destroy-state bit in target bits to be read and written; when there is the write-destroy-state bit in the target bits to be read and written, determining a data state corresponding to the write-destroy-state bit; when the data state corresponding to the write-destroy-state bit is the same as the state of the write-destroy-state bit, performing negation on data to be read and written; and when the data state corresponding to the write-destroy-state bit is different from the state of the write-destroy-state bit, keeping the data to be read and written unchanged. Further provided in the present disclosure is a memory repairing circuit. By means of the memory repairing method and circuit provided in the present disclosure, a storage bit can be repaired to have a small area. La présente divulgation c