A ROBUST ICEFILL METHOD TO PROVIDE VOID FREE TRENCH FILL FOR LOGIC AND MEMORY APPLICATIONS

Methods of filling a gap with a dielectric material including using an inhibition plasma during deposition. The inhibition plasma increases a nucleation barrier of the deposited film. The inhibition plasma selectively interacts near the top of the feature, inhibiting deposition at the top of the fea...

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Bibliographische Detailangaben
Hauptverfasser:	BAKER, Jonathan Grant, BHANDARI, Shiva Sharan, IMADE, Mamoru, AGARWAL, Pulkit, PETRAGLIA, Jennifer Leigh
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Methods of filling a gap with a dielectric material including using an inhibition plasma during deposition. The inhibition plasma increases a nucleation barrier of the deposited film. The inhibition plasma selectively interacts near the top of the feature, inhibiting deposition at the top of the feature compared to the bottom of the feature, enhancing bottom-up fill. L'invention concerne des procédés de remplissage d'un espace avec un matériau diélectrique consistant à utiliser un plasma inhibiteur pendant le dépôt. Le plasma inhibiteur augmente une barrière de nucléation du film déposé. Le plasma inhibiteur interagit sélectivement à proximité de la partie supérieure de l'élément, inhibant le dépôt au sommet de l'élément par rapport au fond de l'élément, améliorant le remplissage de bas en haut.