PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME

The present invention relates to interdigitated back contact (IBC) photovoltaic device (1) having first-type charge collecting structures (IS1) and second-type charge collecting structures (IS2) comprising a first-type doped structured semiconducting layer consisting in a plurality of n- or p-doped portions (6') and a second-type doped semiconducting layer (6''), of the other doped-type of said first-type doped layer (6'). On the doped semiconducting layer (6), a continuous, electrically conductive, multifunctional protection layer (8) is arranged, to protect said semiconducting layer (6), and having a highest metal ion diffusion coefficient D1, that is, at the same temperature, lower than the lowest metal ion diffusion coefficient D2, so that the multifunctional protection layer (8) is less vulnerable to physical and chemical degradation than the to be protected semiconducting layer (6). On said multifunctional protection layer (8), a structured charge collecting layer stack (100) is arranged which vertical trenches (20) to separate electrically the first-type charge collecting structures (IS1) and the second-type charge collecting structures (IS2). This layer stack (100) comprises at least one conductive layer (10, 12). The invention is also achieved by a photovoltaic system comprising at least two interdigitated back contact (IBC) photovoltaic devices (1), and also by a method to realize the interdigitated back contact (IBC) photovoltaic devices (1). La présente invention concerne un dispositif photovoltaïque à contact arrière interdigité (IBC) (1) comprenant des structures de collecte de charges de premier type (IS1) et des structures de collecte de charges de second type (IS2) comprenant une couche semi-conductrice structurée dopée de premier type constituée d'une pluralité de parties dopées n ou p (6') et une couche semi-conductrice dopée de second type (6''), de l'autre type de dopage. Sur la couche semi-conductrice dopée (6) est disposée une couche de protection multifonctionnelle (8) continue, électroconductrice, destinée à protéger ladite couche semi-conductrice (6) et présentant un coefficient de diffusion des ions métalliques D1 supérieur, c'est-à-dire, à la même température, inférieur au plus faible coefficient de diffusion des ions métalliques D2, de telle sorte que la couche de protection multifonctionnelle (8) est moins vulnérable à la dégradation physique et chimique que la couche semi-conductrice à protéger (6). Sur ladite couche de prote