FLUORINE REDUCTION IS SILICON-CONTAINING FILMS

Methods of filling a gap with a dielectric material including using an inhibition plasma during deposition. The inhibition plasma increases a nucleation barrier of the deposited film. A passivation plasma may remove inhibitor species adsorbed on the surface or in the bulk of a deposited dielectric m...

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Bibliographische Detailangaben
Hauptverfasser:	CURTIN, Ian, BHANDARI, Shiva Sharan, AGNEW, Douglas Walter, IMADE, Mamoru, ZHANG, Tao, AGARWAL, Pulkit
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:	Methods of filling a gap with a dielectric material including using an inhibition plasma during deposition. The inhibition plasma increases a nucleation barrier of the deposited film. A passivation plasma may remove inhibitor species adsorbed on the surface or in the bulk of a deposited dielectric material. L'invention concerne des procédés de remplissage d'un espace avec un matériau diélectrique consistant à utiliser un plasma inhibiteur pendant le dépôt. Le plasma inhibiteur augmente une barrière de nucléation du film déposé. Un plasma de passivation peut éliminer les espèces inhibitrices adsorbées sur la surface ou dans la masse d'un matériau diélectrique déposé.