HEAT EXCHANGER FOR MONO-CRYSTAL FURNACE AND MONO-CRYSTAL FURNACE

The present application provides a heat exchanger for a mono-crystal furnace and a mono-crystal furnace. The heat exchanger for the mono-crystal furnace comprises a heat exchanger body and a gas guide structure; the heat exchanger body is provided with an accommodating space for growth of monocrysta...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	ZHU, Yonggang, ZHUO, Zhenzhen, ZHANG, Weijian, DONG, Sheng, BAI, Feng
Format:	Patent
Sprache:	chi ; eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The present application provides a heat exchanger for a mono-crystal furnace and a mono-crystal furnace. The heat exchanger for the mono-crystal furnace comprises a heat exchanger body and a gas guide structure; the heat exchanger body is provided with an accommodating space for growth of monocrystalline silicon, and the accommodating space extends in the axis direction of the heat exchanger body and penetrates through the heat exchanger body; the gas guide structure is provided at one end of the heat exchanger body around the accommodating space, the gas guide structure is provided with a gas guide port, and the gas guide port is communicated with the accommodating space; and the gas guide structure is used for enabling, when the heat exchanger is in contact with the liquid in the mono-crystal furnace, gas flowing into the accommodating space from the other end of the heat exchanger body to flow out of the gas guide port. According to the heat exchanger provided by embodiments of the present application, the