ATOMIC LAYER DEPOSITION WITH IN-SITU SPUTTERING

Examples are disclosed that relate to using in-situ sputtering in an atomic layer deposition tool to form an angular surface feature in a substrate. One example provides a method of forming an angular surface feature on a substrate in an integrated circuit process. The method comprises placing the s...

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Bibliographische Detailangaben
Hauptverfasser:	BAKER, Jonathan Grant, LIU, Pei-Chi, JIANG, Gengwei, AGARWAL, Pulkit
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Examples are disclosed that relate to using in-situ sputtering in an atomic layer deposition tool to form an angular surface feature in a substrate. One example provides a method of forming an angular surface feature on a substrate in an integrated circuit process. The method comprises placing the substrate in a processing chamber of an atomic layer deposition (ALD) tool. The method further comprises controlling the ALD tool to form a film on the substrate by performing one or more ALD cycles. The method further comprises controlling the ALD tool to sputter the film to form the angular surface feature. Des exemples sont divulgués et concernent l'utilisation d'une pulvérisation cathodique in situ dans un outil de dépôt de couche atomique pour former un élément de surface angulaire dans un substrat. Un exemple concerne un procédé de formation d'une caractéristique de surface angulaire sur un substrat dans un processus de circuit intégré. Le procédé comprend le placement du substrat dans une chambre de traitement d'un outil de dépôt de couche atomique (ALD). Le procédé comprend en outre la commande de l'outil ALD pour former un film sur le substrat en effectuant un ou plusieurs cycles ALD. Le procédé comprend en outre la commande de l'outil ALD pour pulvériser le film pour former l'élément de surface angulaire.