SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREFOR, AND MEMORY

The present disclosure relates to the technical field of semiconductors, and relates to a semiconductor structure and a formation method therefor, and a memory. The semiconductor structure of the present disclosure comprises a substrate and a word-line structure, the substrate comprising an array area and a peripheral area, and the word line structure comprising a first conductive layer, which is located inside the substrate, wherein the first conductive layer extends through the array area to the peripheral area in a first direction; and in a direction perpendicular to the substrate, the height of the first conductive layer located on the surface of the peripheral area is greater than the height of the first conductive layer located on the surface of the array area. By means of the semiconductor structure of the present disclosure, the process difficulty can be reduced, and the product yield can be improved. (FIG. 3) La présente divulgation se rapporte au domaine technique des semi-conducteurs, et concerne u