METHOD FOR PREPARING COMPOUND CRYSTAL VIA MELT MIGRATION UNDER SUPERGRAVITY

A method for preparing a compound crystal via melt migration under supergravity. The method comprises: sequentially placing compound semiconductor polycrystals having a molecular formula of AxBy, an elementary substance of an element A, and seed crystals in a crucible in a close contact manner, and...

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Bibliographische Detailangaben
Hauptverfasser:	LI, Xiaolan, SHAO, Huimin, WANG, Shujie, XU, Senfeng, WANG, Yang, SUN, Niefeng, LIU, Huisheng, HUAI, Junyan, LIU, Zheng, SHI, Yanlei, DANG, Jiping
Format:	Patent
Sprache:	chi ; eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A method for preparing a compound crystal via melt migration under supergravity. The method comprises: sequentially placing compound semiconductor polycrystals having a molecular formula of AxBy, an elementary substance of an element A, and seed crystals in a crucible in a close contact manner, and horizontally placing the crucible on a centrifugal rotating device; heating the crucible to T0, 800°C