METHOD FOR PREPARING TOP ELECTRODE OF MAGNETIC MEMORY, AND MAGNETIC STORAGE UNIT

Provided in the present invention is a method for preparing a top electrode of a magnetic memory, the method comprising: providing a bottom structure, wherein the bottom structure has a patterned magnetic tunnel junction, and the top of the magnetic tunnel junction is covered with a hard metal mask; forming a side wall layer on side walls of the magnetic tunnel junction and the hard metal mask so as to form a first intermediate structure, wherein the side wall layer is a single-layer film layer or a stacked film layer; forming a backfill medium on the first intermediate structure, wherein the etch selectivity ratio of the backfill medium to the single-layer film layer or the stacked film layer is higher than a predetermined threshold; and forming a top metal interconnection structure on the backfill medium. By means of the method for preparing a top electrode of a magnetic memory provided in the present invention, a process window at the top of a magnetic tunnel junction can enlarge without increasing the hei