NON-STEP NANOSHEET STRUCTURE FOR STACKED FIELD-EFFECT TRANSISTORS

Embodiments herein include semiconductor structures that may include a first field-effect transistor (FET) stacked above a second FET in a non-step nanosheet structure, and a bottom contact electrically connected to a first bottom source/drain (S/D) of the second FET through a portion of a first top...

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Bibliographische Detailangaben

Hauptverfasser:	TSUTSUI, Gen, MOCHIZUKI, Shogo
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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