SEMICONDUCTOR MANUFACTURING APPARATUS, AND METHOD FOR REMOVING DEPOSIT IN CHAMBER OF SEMICONDUCTOR MANUFACTURING APPARATUS

Disclosed in the present application is a semiconductor manufacturing apparatus, comprising: a chamber comprising an inner chamber, an outer chamber, and a passage that communicates the inner chamber and the outer chamber and is located between the inner chamber and a chamber side wall; and one or more electrodes, which are disposed in the chamber side wall and used to ionize a process gas from the inner chamber to generate plasma so as to remove the deposit generated in the inner chamber. According to the technical solution proposed in the present application, the electrodes are disposed in the chamber of the semiconductor manufacturing apparatus, the electrodes excite the process gas to generate plasma that etches and removes the deposit in the chamber, which alleviates the adverse effects of conventional scraping removal methods on the apparatus, working environment and workers. Est divulgué dans la présente demande un appareil de fabrication de semi-conducteur, comprenant : une chambre comprenant une cham