DEEP-ULTRAVIOLET LED CHIP HAVING A VERTICAL STRUCTURE, MANUFACTURING METHOD, AND EPITAXIAL STRUCTURE

The present application discloses a deep-ultraviolet LED chip having a vertical structure, a manufacturing method, and an epitaxial structure. The manufacturing method comprises: forming an epitaxial structure on a sapphire substrate, the epitaxial structure having a first surface and a second surface, and the second surface being connected to the sapphire substrate; dividing the epitaxial structure into a plurality of epitaxial units arranged in an array, part of the sapphire substrate being exposed between adjacent epitaxial units; forming an adhesive layer on the sapphire substrate exposed between adjacent epitaxial units; bonding and fixing a second substrate over the first surface of the epitaxial structure; using laser to lift off the sapphire substrate; and removing the adhesive layer. In the manufacturing method, the epitaxial structure is divided into a plurality of epitaxial units arranged in an array, such that the problem of serious damage to the epitaxial structure caused by a strong impact insta