PLASMA ENHANCED LOW TEMPERATURE ATOMIC LAYER DEPOSITION OF METALS

Provided are reduced-temperature plasma enhanced atomic layer deposition processes including application of a thin metal layer by contacting a substrate surface at temperatures of 300 °C or lower with a metal precursor and a plasma of a hydrogen-containing gas source generated directly or remotely....

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Bibliographische Detailangaben
Hauptverfasser:	MANDIA, David Joseph, ERICKSON, Ann, VAN CLEEMPUT, Patrick August, LAI, Chiukin Steven, BLAKENEY, Kyle Jordan, FOX, Alexander Ray, MOHIMI, Elham, HENRI, Jon
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Provided are reduced-temperature plasma enhanced atomic layer deposition processes including application of a thin metal layer by contacting a substrate surface at temperatures of 300 °C or lower with a metal precursor and a plasma of a hydrogen-containing gas source generated directly or remotely. L'invention concerne des procédés de dépôt de couche atomique améliorés par plasma à température réduite comprenant l'application d'une couche métallique mince par mise en contact d'une surface de substrat à des températures de 300 °C ou moins avec un précurseur métallique et un plasma d'une source de gaz contenant de l'hydrogène générée directement ou à distance.