POLISHING SLURRY COMPOSITION FOR SILICON CARBIDE WAFER

The present invention relates to a polishing slurry composition for a silicon carbide wafer, and a polishing slurry composition for a silicon carbide wafer according to an embodiment of the present invention comprises polishing particles, an oxidant, a water-soluble transition metal, and a transitio...

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Bibliographische Detailangaben
Hauptverfasser:	SHIN, Na Ra, CHOI, Bo Hyeok, KIM, Eun Ock, PAIK, Ungyu, LEE, Ganggyu, JUNG, Suyeong, SONG, Taeseup, KIM, Dongwook
Format:	Patent
Sprache:	eng ; fre ; kor
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES
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Beschreibung
Zusammenfassung:	The present invention relates to a polishing slurry composition for a silicon carbide wafer, and a polishing slurry composition for a silicon carbide wafer according to an embodiment of the present invention comprises polishing particles, an oxidant, a water-soluble transition metal, and a transition metal ion complexing agent. La présente invention concerne une composition de suspension de polissage pour une tranche de carbure de silicium, et une composition de suspension de polissage pour une tranche de carbure de silicium selon un mode de réalisation de la présente invention comprend des particules de polissage, un oxydant, un métal de transition soluble dans l'eau et un agent complexant les ions de métal de transition. 본 발명은 실리콘 카바이드 웨이퍼용 연마 슬러리 조성물에 관한 것으로서, 본 발명의 일 실시예에 따른 실리콘 카바이드 웨이퍼용 연마 슬러리 조성물은, 연마입자; 산화제; 수용성 전이금속; 및 전이금속 이온 착화제;를 포함한다.