HARDWARE TO UNIFORMLY DISTRIBUTE ACTIVE SPECIES FOR SEMICONDUCTOR FILM PROCESSING

A substrate processing system is provided having a processing chamber. The processing chamber includes a lid plate, one or more chamber sidewalls, and a chamber base that collectively define a processing volume. An annular plate is coupled to the lid plate, and an edge manifold is fluidly coupled to...

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Bibliographische Detailangaben
Hauptverfasser:	ZHAO, Mingrui, YADAMANE, Sandesh, PATIL SHANTHAVEERASWAMY, Shreyas, WU, Kai, SINGH, Harpreet, KOPPA, Manjunatha, TOKUR MOHANA, Srinivas, HUANG, Zubin, RAVI, Jallepally, WANG, Peiqi
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A substrate processing system is provided having a processing chamber. The processing chamber includes a lid plate, one or more chamber sidewalls, and a chamber base that collectively define a processing volume. An annular plate is coupled to the lid plate, and an edge manifold is fluidly coupled to the processing chamber through the annular plate and the lid plate. The substrate processing system includes a center manifold that is coupled to the lid plate. L'invention concerne un système de traitement de substrat comportant une chambre de traitement. La chambre de traitement comprend une plaque de couvercle, une ou plusieurs parois latérales de chambre, et une base de chambre qui définissent collectivement un volume de traitement. Une plaque annulaire est accouplée à la plaque de couvercle, et un collecteur périphérique est accouplé de manière fluidique à la chambre de traitement par l'intermédiaire de la plaque annulaire et de la plaque de couvercle. Le système de traitement de substrat comprend un collecteur central qui est accouplé à la plaque de couvercle.