TRANSISTOR DEVICES WITH MULTI-LAYER INTERLAYER DIELECTRIC STRUCTURES

A transistor device includes a channel region, a first source/drain region adjacent to a first end of the channel region and a second source/drain region adjacent to a second end of the channel region, a gate structure disposed on the channel region, the first source/drain region and the second sour...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LIM, Rodney Shunleong, FAN, Dejiu, TSAI, Yun-Chu, KIM, Jung Bae, BAE, Yang Ho, YIM, Dong Kil
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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