SURFACE INHIBITION ATOMIC LAYER DEPOSITION

Atomic layer deposition (ALD) of dielectric material in gaps that facilitates void-free bottom-up gap fill can involve flowing a reaction inhibitor during the ALD process. In some embodiments, the reaction inhibitor is flowed during at least part of a plasma operation of a plasma-enhanced ALD (PEALD...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	ABEL, Joseph R, BHANDARI, Shiva Sharan, ZHANG, Tao, AGARWAL, Pulkit, PETRAGLIA, Jennifer Leigh
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Atomic layer deposition (ALD) of dielectric material in gaps that facilitates void-free bottom-up gap fill can involve flowing a reaction inhibitor during the ALD process. In some embodiments, the reaction inhibitor is flowed during at least part of a plasma operation of a plasma-enhanced ALD (PEALD) process. Dépôt de couches atomiques (ALD) de matériau diélectrique dans des espaces qui facilite le remplissage d'espaces de bas en haut sans vide, pouvant consister à faire circuler un inhibiteur de réaction pendant le processus ALD. Dans certains modes de réalisation, l'inhibiteur de réaction circule pendant au moins une partie d'une opération au plasma d'un processus ALD activé par plasma (PEALD).