GATE ALL AROUND BACKSIDE POWER RAIL FORMATION WITH MULTI-COLOR BACKSIDE DIELECTRIC ISOLATION SCHEME

Semiconductor devices and methods of manufacturing the same are described. The method includes forming distinct and separate bottom dielectric isolation layers underneath the source/drain and underneath the gate of a gate all around device. Selectively remove of the bottom dielectric isolation layer...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BAZIZI, El Mehdi, PAL, Ashish, PRANATHARTHIHARAN, Balasubramanian, YEOH, Andrew, COLOMBEAU, Benjamin
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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