METHOD FOR FORMATION OF INSULATION FILM PATTERN, PRECURSOR USED FOR PATTERN FORMATION, AND SEMICONDUCTOR DEVICE

The present invention provides a method for formation of an insulation film pattern, the method comprising the steps of: providing a substrate including two or more different types of dielectric film regions; selectively forming a blocking film on the substrate to include a first region where a bloc...

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Bibliographische Detailangaben
Hauptverfasser:	YUN, Ha Kyung, WEO, So Jeong, KIM, Pil Soo, KIM, Jun Young, SIM, Jang Keun, LEE, Han jin, LEE, Jae Woo, BOK, Cheoi Kyu
Format:	Patent
Sprache:	eng ; fre ; kor
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention provides a method for formation of an insulation film pattern, the method comprising the steps of: providing a substrate including two or more different types of dielectric film regions; selectively forming a blocking film on the substrate to include a first region where a blocking film is formed and a second region where no or relatively little blocking film is formed, whereby a difference in water contact angle between the first region and the second region ranges from 7 to 50 degrees (Deg). La présente invention concerne un procédé de formation d'un motif de couche d'isolation, le procédé comprenant les étapes consistant à : utiliser un substrat comprenant au moins deux types différents de régions de couche diélectrique; former sélectivement une couche d'arrêt sur le substrat qui va ainsi comprendre une première région dans laquelle une couche d'arrêt est formée et une seconde région dans laquelle aucune couche d'arrêt n'est formée ou une couche d'arrêt relativement petite est formée, une différence d'angle de contact avec l'eau entre la première région et la seconde région étant comprise entre 7 et 50 degrés (deg). 본 발명은 다른 두 종류 이상의 유전체막 영역을 포함하는 기판을 제공하는 단계; 및 상기 기판 상에 차단막이 형성된 제1영역과 차단막이 형성되지 않거나 또는 상대적으로 덜 형성된 제2영역을 포함하도록 차단막을 선택적으로 형성하는 단계;를 포함하는 절연막 패턴 형성 방법으로서, 상기 제1영역과 제2영역의 물접촉각 차이는 7 내지 50 도(Deg) 범위내인 절연막 패턴 형성 방법을 제공한다.