PREPARATION METHOD FOR ELECTRONICS-GRADE BORON TRICHLORIDE, AND BORON TRICHLORIDE OBTAINED THEREBY

The invention relates to the technical field of chemical separation, and in particular relates to a preparation method for electronics-grade boron trichloride and boron trichloride obtained thereby. Before a boron trichloride target product is produced, metal impurities and chlorine gas first produce a metal chloride; due to the reaction temperature of the metal and the chlorine gas generally being 350-450 °C, said temperature is lower than the temperature that boron carbide and chlorine gas produce boron trichloride, and therefore when the temperature is controlled, the two products can be separately produced; the produced metal chloride is gasified at a temperature of 400-450 °C, and is discharged along with unreacted chlorine gas; the reaction between boron carbide and chlorine gas is carried out after removing the metal impurities, and the boron trichloride target product is produced. The present invention can deeply remove metal chloride impurities in boron trichloride, the removal rate reaching 95 % and