REAL-TIME MONITORING AND PROTECTION CIRCUIT FOR GAN TRANSISTORS TO PROTECT FROM AND MONITOR THE TRAPPING PHENOMENON

The invention relates to an electronic device provided with GaN-based transistors (11, 12), and comprising a control circuit configured to evaluate the drain-source on-state resistance (RDS1_ON) of at least one first transistor (11) of said transistors (11, 12) Dispositif électronique doté de transi...

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Hauptverfasser:	NGUYEN, Van-Sang, CATELLANI, Stéphane, BIER, Anthony
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRONIC CIRCUITRY ELECTRICITY PULSE TECHNIQUE
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creator	NGUYEN, Van-Sang CATELLANI, Stéphane BIER, Anthony
description	The invention relates to an electronic device provided with GaN-based transistors (11, 12), and comprising a control circuit configured to evaluate the drain-source on-state resistance (RDS1_ON) of at least one first transistor (11) of said transistors (11, 12) Dispositif électronique doté de transistors (11, 12) à base de GaN, et comprenant un circuit de contrôle configuré pour évaluer la résistance drain source à l'état passant (RDS1_ON) d'au moins un premier transistor (11) parmi lesdits transistors (11,12)
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2023111404A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2023111404A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2023111404A13</originalsourceid><addsrcrecordid>eNqNzMEKwjAQBNBePIj6DwueC03bHwgxbQNmN2xXPJYi8SRaiP-PrdS7h2Eub2abJbb6nIvzFjyhE2KHLWg8QWASa8QRgnFsLk6gIYZWIwhr7F0_4x6EfhIaJv-drk8gnV1sCMtn6CySn4P7bHMfHyke1t5lx8aK6fI4vYaYpvEWn_E9XKksykopVRe1VtV_6gOU6Tna</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>REAL-TIME MONITORING AND PROTECTION CIRCUIT FOR GAN TRANSISTORS TO PROTECT FROM AND MONITOR THE TRAPPING PHENOMENON</title><source>esp@cenet</source><creator>NGUYEN, Van-Sang ; CATELLANI, Stéphane ; BIER, Anthony</creator><creatorcontrib>NGUYEN, Van-Sang ; CATELLANI, Stéphane ; BIER, Anthony</creatorcontrib><description>The invention relates to an electronic device provided with GaN-based transistors (11, 12), and comprising a control circuit configured to evaluate the drain-source on-state resistance (RDS1_ON) of at least one first transistor (11) of said transistors (11, 12) Dispositif électronique doté de transistors (11, 12) à base de GaN, et comprenant un circuit de contrôle configuré pour évaluer la résistance drain source à l'état passant (RDS1_ON) d'au moins un premier transistor (11) parmi lesdits transistors (11,12)</description><language>eng ; fre</language><subject>BASIC ELECTRONIC CIRCUITRY ; ELECTRICITY ; PULSE TECHNIQUE</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230622&DB=EPODOC&CC=WO&NR=2023111404A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230622&DB=EPODOC&CC=WO&NR=2023111404A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NGUYEN, Van-Sang</creatorcontrib><creatorcontrib>CATELLANI, Stéphane</creatorcontrib><creatorcontrib>BIER, Anthony</creatorcontrib><title>REAL-TIME MONITORING AND PROTECTION CIRCUIT FOR GAN TRANSISTORS TO PROTECT FROM AND MONITOR THE TRAPPING PHENOMENON</title><description>The invention relates to an electronic device provided with GaN-based transistors (11, 12), and comprising a control circuit configured to evaluate the drain-source on-state resistance (RDS1_ON) of at least one first transistor (11) of said transistors (11, 12) Dispositif électronique doté de transistors (11, 12) à base de GaN, et comprenant un circuit de contrôle configuré pour évaluer la résistance drain source à l'état passant (RDS1_ON) d'au moins un premier transistor (11) parmi lesdits transistors (11,12)</description><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRICITY</subject><subject>PULSE TECHNIQUE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzMEKwjAQBNBePIj6DwueC03bHwgxbQNmN2xXPJYi8SRaiP-PrdS7h2Eub2abJbb6nIvzFjyhE2KHLWg8QWASa8QRgnFsLk6gIYZWIwhr7F0_4x6EfhIaJv-drk8gnV1sCMtn6CySn4P7bHMfHyke1t5lx8aK6fI4vYaYpvEWn_E9XKksykopVRe1VtV_6gOU6Tna</recordid><startdate>20230622</startdate><enddate>20230622</enddate><creator>NGUYEN, Van-Sang</creator><creator>CATELLANI, Stéphane</creator><creator>BIER, Anthony</creator><scope>EVB</scope></search><sort><creationdate>20230622</creationdate><title>REAL-TIME MONITORING AND PROTECTION CIRCUIT FOR GAN TRANSISTORS TO PROTECT FROM AND MONITOR THE TRAPPING PHENOMENON</title><author>NGUYEN, Van-Sang ; CATELLANI, Stéphane ; BIER, Anthony</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2023111404A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2023</creationdate><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRICITY</topic><topic>PULSE TECHNIQUE</topic><toplevel>online_resources</toplevel><creatorcontrib>NGUYEN, Van-Sang</creatorcontrib><creatorcontrib>CATELLANI, Stéphane</creatorcontrib><creatorcontrib>BIER, Anthony</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NGUYEN, Van-Sang</au><au>CATELLANI, Stéphane</au><au>BIER, Anthony</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>REAL-TIME MONITORING AND PROTECTION CIRCUIT FOR GAN TRANSISTORS TO PROTECT FROM AND MONITOR THE TRAPPING PHENOMENON</title><date>2023-06-22</date><risdate>2023</risdate><abstract>The invention relates to an electronic device provided with GaN-based transistors (11, 12), and comprising a control circuit configured to evaluate the drain-source on-state resistance (RDS1_ON) of at least one first transistor (11) of said transistors (11, 12) Dispositif électronique doté de transistors (11, 12) à base de GaN, et comprenant un circuit de contrôle configuré pour évaluer la résistance drain source à l'état passant (RDS1_ON) d'au moins un premier transistor (11) parmi lesdits transistors (11,12)</abstract><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRONIC CIRCUITRY ELECTRICITY PULSE TECHNIQUE
title	REAL-TIME MONITORING AND PROTECTION CIRCUIT FOR GAN TRANSISTORS TO PROTECT FROM AND MONITOR THE TRAPPING PHENOMENON
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T08%3A43%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NGUYEN,%20Van-Sang&rft.date=2023-06-22&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EWO2023111404A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true