REAL-TIME MONITORING AND PROTECTION CIRCUIT FOR GAN TRANSISTORS TO PROTECT FROM AND MONITOR THE TRAPPING PHENOMENON

REAL-TIME MONITORING AND PROTECTION CIRCUIT FOR GAN TRANSISTORS TO PROTECT FROM AND MONITOR THE TRAPPING PHENOMENON

The invention relates to an electronic device provided with GaN-based transistors (11, 12), and comprising a control circuit configured to evaluate the drain-source on-state resistance (RDS1_ON) of at least one first transistor (11) of said transistors (11, 12) Dispositif électronique doté de transi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: NGUYEN, Van-Sang, CATELLANI, Stéphane, BIER, Anthony
Format: Patent
Sprache:eng ; fre
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
PULSE TECHNIQUE
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Beschreibung
Zusammenfassung:The invention relates to an electronic device provided with GaN-based transistors (11, 12), and comprising a control circuit configured to evaluate the drain-source on-state resistance (RDS1_ON) of at least one first transistor (11) of said transistors (11, 12) Dispositif électronique doté de transistors (11, 12) à base de GaN, et comprenant un circuit de contrôle configuré pour évaluer la résistance drain source à l'état passant (RDS1_ON) d'au moins un premier transistor (11) parmi lesdits transistors (11,12)