SILICON CONTROLLED RECTIFIER AND PREPARATION METHOD THEREFOR

The present invention provides a silicon controlled rectifier and a preparation method therefor. A first low-resistance region and a second low-resistance region are additionally provided in a first well region and a second well region of the silicon controlled rectifier, respectively. Since the resistance values of the first low-resistance region and the second low-resistance region are low, the overall resistance of the first well region and the overall resistance of the second well region are both reduced, so that the turn-on voltage of the device is reduced, thereby improving the current bleeding capability of the silicon controlled rectifier. In addition, the first low-resistance region is provided below a first doped region, and the second low-resistance region is provided below a fourth doped region. Therefore, the first low-resistance region does not affect the turn-on of a transistor formed by a second doped region, the first well region, and the second well region; and the second low-resistance regi