METHOD FOR PREPARING SILICON NITRIDE FILLER FOR THERMAL INTERFACE MATERIAL

The present invention relates to a method for preparing a silicon nitride filler for a thermal interface material and, more particularly, to a method for preparing a silicon nitride filler for a thermal interface material, in which when added to the thermal interface material, silicon nitride powder...

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Bibliographische Detailangaben
Hauptverfasser:	JUNG, Kyoung Sun, OH, Byeong Yun, LEE, Yeol Ho, JANG, Ha Jun, LEE, Byeong Hoon, KIM, Mi Ri, SEO, In Ha
Format:	Patent
Sprache:	eng ; fre ; kor
Schlagworte:	ADHESIVES ARTIFICIAL STONE CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS COMPOUNDS THEREOF CONCRETE DYES INORGANIC CHEMISTRY LIME, MAGNESIA MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-METALLIC ELEMENTS PAINTS POLISHES REFRACTORIES SLAG TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	The present invention relates to a method for preparing a silicon nitride filler for a thermal interface material and, more particularly, to a method for preparing a silicon nitride filler for a thermal interface material, in which when added to the thermal interface material, silicon nitride powder can be evenly mixed to greatly improve thermal conductivity. La présente invention concerne un procédé de préparation d'une charge de nitrure de silicium pour un matériau d'interface thermique et, plus particulièrement, un procédé de préparation d'une charge de nitrure de silicium pour un matériau d'interface thermique, dans lequel, lorsqu'il est ajouté au matériau d'interface thermique, la poudre de nitrure de silicium peut être mélangée uniformément pour améliorer considérablement la conductivité thermique. 본 발명은 열계면 물질용 질화규소 충진제 제조 방법에 관한 것으로, 보다 구체적으로는 열계면 물질에 첨가되었을 때 질화규소 분말이 고루 혼합되게 하여 열전도성을 매우 향상시킬 수 있는 열계면 물질용 질화규소 충진제 제조 방법에 관한 것이다.