BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF

Disclosed in the present invention are a bottom anti-reflective coating for deep ultraviolet lithography, a preparation method therefor and the use thereof. A polymer disclosed in the present invention is prepared by the following method: (1) preheating a solvent I; (2) mixing a monomer as shown in...

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Bibliographische Detailangaben
Hauptverfasser:	GENG, Zhiyue, WANG, Su, FANG, Shunong
Format:	Patent
Sprache:	chi ; eng ; fre
Schlagworte:	ADHESIVES APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL PAINT OR INK REMOVERS CHEMISTRY CINEMATOGRAPHY COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS COMPOSITIONS BASED THEREON CORRECTING FLUIDS DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY FILLING PASTES HOLOGRAPHY INKS MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS POLISHES SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF MATERIALS THEREFOR WOODSTAINS
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Beschreibung
Zusammenfassung:	Disclosed in the present invention are a bottom anti-reflective coating for deep ultraviolet lithography, a preparation method therefor and the use thereof. A polymer disclosed in the present invention is prepared by the following method: (1) preheating a solvent I; (2) mixing a monomer as shown in formula (A), a monomer as shown in formula (B), a monomer as shown in formula (C), a cross-linking agent as shown in formula (L), and an initiator and a solvent II to obtain a mixed solution; and (3) adding the mixed solution to a preheated solvent and perform a polymerization reaction, wherein step (1) and step (2) are in no particular order. The bottom anti-reflective coating for deep ultraviolet lithography can reduce the reflectivity, and after the bottom anti-reflective coating is spin-coated with a photoresist, no scum formed by the bottom anti-reflective coating is observed. La présente invention concerne un revêtement antireflet inférieur pour lithographie par ultraviolets lointains, un procédé de préparati