USE OF ARRAYS OF QUARTZ PARTICLES DURING SINGLE CRYSTAL SILICON INGOT PRODUCTION

Methods for producing single crystal silicon ingots in which an array of quartz particles are added to the crucible assembly before ingot growth are disclosed. The array may be disposed in the outer melt zone of the crucible assembly as in a continuous Czochralski (CCz) process. The array is made of...

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Bibliographische Detailangaben
Hauptverfasser:	HUDSON, Carissima Marie, PHILLIPS, Richard Joseph
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Methods for producing single crystal silicon ingots in which an array of quartz particles are added to the crucible assembly before ingot growth are disclosed. The array may be disposed in the outer melt zone of the crucible assembly as in a continuous Czochralski (CCz) process. The array is made of quartz particles that are interconnected by linking members. L'invention concerne des procédés de production de lingots de silicium monocristallin dans lesquels un réseau de particules de quartz est ajouté à l'ensemble creuset avant la croissance du lingot. Le réseau peut être disposé dans la zone de fusion externe de l'ensemble creuset comme dans un tirage de Czochralski continu (CCz). Le réseau est constitué de particules de quartz qui sont interconnectées par des éléments de liaison.