CVD SINGLE CRYSTAL DIAMOND

A CVD single crystal diamond having a concentration of single substitutional nitrogen atoms, Ns 0, in their neutral charge state as measured by EPR of between 0.25 and 3 ppm, and wherein the CVD single crystal diamond has a total concentration of nitrogen vacancy centres in their neutral and negativ...

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Bibliographische Detailangaben
Hauptverfasser:	EDMONDS, Andrew Mark, LIGGINS, Stephanie, GEEKIE, Douglas John, HILLMAN, William Joseph, TRUSCOTT, Benjamin Simon
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A CVD single crystal diamond having a concentration of single substitutional nitrogen atoms, Ns 0, in their neutral charge state as measured by EPR of between 0.25 and 3 ppm, and wherein the CVD single crystal diamond has a total concentration of nitrogen vacancy centres in their neutral and negative charge states (NV0 and NV-) that is between 0.1 and 0.8 times the Ns 0 concentration. L'invention concerne un diamant monocristallin CVD ayant une concentration d'atomes d'azote substituants uniques, Ns 0, dans leur état de charge neutre, telles que mesurées par EPR, comprise entre 0,25 et 3 ppm, et le diamant monocristallin CVD ayant une concentration totale de centres de vacances d'azote dans leurs états de charge neutre et négatif (NV0 et NV-) qui est comprise entre 0,1 et 0,8 fois la concentration de Ns 0.