MICRO LIGHT-EMITTING DIODE CHIP AND DISPLAY DEVICE

Disclosed in the present invention is a micro light-emitting diode chip, for example, comprising an epitaxial structure. The epitaxial structure comprises a first doping-type semiconductor layer, a second doping-type semiconductor layer, and an active layer located between the first doping-type semi...

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Bibliographische Detailangaben
Hauptverfasser: HSU, Chenke, LIU, Tungkai, XIE, Xiangwei
Format: Patent
Sprache:chi ; eng ; fre
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Beschreibung
Zusammenfassung:Disclosed in the present invention is a micro light-emitting diode chip, for example, comprising an epitaxial structure. The epitaxial structure comprises a first doping-type semiconductor layer, a second doping-type semiconductor layer, and an active layer located between the first doping-type semiconductor layer and the second doping-type semiconductor layer; a patterned structure is provided on the light-emitting side of the first doping-type semiconductor layer distant from the active layer; and the long side a of the micro light-emitting diode chip, the thickness b of the micro light-emitting diode chip and the peak-valley height difference c of the patterned structure satisfy the conditions: 0.01≤b/a≤6, and 0.01≤c/b≤0.3. According to the present invention, by designing the structural size and/or shape of the micro light-emitting diode chip, for example, designing the peak-valley height difference of the patterned structure to satisfy the condition: 0.01≤c/b≤0.3, the power of laser lift-off can be reduce