BOTTOM AIR SPACER BY OXIDATION

VFET devices having a porous bottom air spacer formed by oxidation are provided. In one aspect, a VFET device includes: at least one fin present on a substrate, wherein the at least one fin serves as a vertical fin channel of the VFET device; a bottom source/drain region at a base of the at least on...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SONG, Yi, DURFEE, Curtis, BASKER, Veeraraghavan, SIDDIQUI, Shahab, ZHOU, Huimei
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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