IGBT MODULE WITH HIGH INSULATION VOLTAGE

The present invention belongs to the technical field of power modules, and relates to an IGBT module with a high insulation voltage. The IGBT module comprises: a plurality of power semiconductor chips and a plurality of DBC ceramic substrates, which are located in an insulation housing, wherein the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YU, Kai, TAO, Chongbo, LI, Guofeng, XING, Yi
Format:	Patent
Sprache:	chi ; eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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